Post-Doc Position Porous Gallium Nitride Layers

  • Full Time
  • Austria

JOB DESCRIPTION
TU Wien is located in the heart of Europe, in a cosmopolitan city of great cultural diversity. Our identity as a research university means that we build our reputation through our research. TU Wien combines basic and applied research and research-oriented teaching at the highest level.

The group of Prof. Ulrich Schmid at the Institute of Sensor and Actuator Systems invites applications for a 1.5-year Post-doc position (starting October 1, 2021) in the field of photoelectrochemically porosification of wide band gap semiconductors.

The Project
Due to outstanding properties in comparison to silicon (Si) such as a large bandgap of EG = 3.2 eV ensuring a high electric breakdown strength of about 3.3 MV/cm (Si: 0.3 MV/cm) as well as a high electron mobility gallium nitride (GaN) is regarded as one of the most promising wide band gap semiconductors for future high frequency and high-power electronic devices. Besides these well-known material parameters, advanced device architectures request novel approaches for fabrication. In the recent years, electrochemically porosified GaN emerged as promising technology to reduce interface strain and to integrate optical devices with enhanced performance (e.g. LEDs, lasers, Bragg mirrors) into GaN substrates. Furthermore, the surface to volume ratio could be increased for chemical sensor applications as well as the realization of membranes lifted-off from the GaN mother substrate was demonstrated. To exploit the full potential of photoelectrochemically porosified GaN layers, a deeper understanding on pore formation and pore geometry is needed which we want to address in this project. For more information about the project please contact the principal investigator Prof. Ulrich Schmid (ulrich.e366.schmid@tuwien.ac.at).

Your Profile
For this most ambitious project we are looking for a motivated experienced researcher fulfilling these requirements:

PhD or comparable degree in physics, chemistry, material science, electrical engineering microsystems, or in a related subject
Profound knowledge in electrochemistry, especially in the etching of semiconductors such as GaN or SiC is considered a strong plus
Expertise in the characterization of porous materials and data analysis (e.g. with Python) is considered a strong plus
Expertise in the modelling and simulation of pore formation and pore geometry in a photoelectrochemical etching process is considered a strong plus
Solid written and oral communication skills in English
We Offer
The successful candidate will work in the group of Prof. Ulrich Schmid at the Institute of Sensor and Actuator Systems located in the center of Vienna. The institute offers an international environment and excellent infrastructure. You can find more information about the group and the institute at mst.isas.tuwien.ac.at.

Salary of the position are according to collective labor agreement for employees at universities, salary group B1, based on 40 hours per week, a gross salary of currently EUR 55.242 per year.

Your Application
We invite highly qualified and motivated researchers with a PhD having a strong interest in porous semiconductors and their applications to send us your detailed application documents (including a letter of motivation and CV) in a single pdf file containing via email
to PostDoc-366-2@tuwien.ac.at until September 15, 2021

Candidates are not eligible for a refund of expenses for travelling and lodging related to the application process.

TU Wien intends to increase the number of women on its faculty and therefore specifically invites applications by women. Among equally qualified applicants women will receive preferential consideration.

 

To apply for this job please visit academicpositions.com.