nhussain7766 University of Cambridge - Department of Materials Science and Metallurgy
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A Research Associate position is available immediately to develop tunnel field effect transistors based on two dimensional semiconductors. The project, which is funded by the ERC Adv Grant, will involve fabrication of state-of-the art TFETs using various two-dimensional materials and ultra-clean p- and n-type contacts.
Applicants must have expert knowledge of device physics, 2D semiconductors, fabrication of devices using electron beam lithography, low temperature electronic measurements using probe station and physical property measurement system. The experimental work to be undertaken will be: mechanical exfoliation of 2D semiconductors in a glove box, vertical stacking of different 2D materials with clean interfaces, making clean p- and n-type contacts on monolayered semiconductors, lithographic process and electrical measurements. Applicants should have a PhD in a relevant subject.
The successful candidate will work in the 2D Materials and Devices Group under the supervision of Professor Manish Chhowalla.
Fixed-term: The funds for this post are available for 12 months in the first instance, with the possibility to be extended to 2 more years.
To apply online for this vacancy and to view further information about the role, please visit :
To apply online for this vacancy, please click on the ‘Apply’ button below. This will route you to the University’s Web Recruitment System, where you will need to register an account (if you have not already) and log in before completing the online application form.
Informal enquiries about this vacancy should be sent to Ms Ana Talaban-Bailey firstname.lastname@example.org
Applicants should provide a CV, including contact details of two referees, a list of publications and a covering letter describing their suitability for the role.
Please quote reference LJ28194 on your application and in any correspondence about this vacancy.
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